Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy

Silicon carbide can be reproducibly grown on (111)Si below 600 °C by carbonization using an elemental solid carbon source in molecular beam epitaxy. The initial stages were observed by in situ reflection high-energy electron diffraction. Prior to silicon carbide growth, the continuous carbon flux le...

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Veröffentlicht in:Applied physics letters 1998-12, Vol.73 (24), p.3542-3544
Hauptverfasser: Cimalla, V., Stauden, Th, Ecke, G., Scharmann, F., Eichhorn, G., Pezoldt, J., Sloboshanin, S., Schaefer, J. A.
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Sprache:eng
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Zusammenfassung:Silicon carbide can be reproducibly grown on (111)Si below 600 °C by carbonization using an elemental solid carbon source in molecular beam epitaxy. The initial stages were observed by in situ reflection high-energy electron diffraction. Prior to silicon carbide growth, the continuous carbon flux lead to a transition from the (7×7) reconstruction of clean (111)Si to a carbon-induced (∛×∛)R30° structure. Above 660 °C, the silicon carbide growth starts directly on the silicon surface via three-dimensional nucleation. Below 660 °C, first a thin silicon–carbon alloy was formed by diffusion of carbon into the surface near the region with a concentration exceeding the bulk solubility in silicon.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.122801