Highly packed InGaAs quantum dots on GaAs(311)B

Highly packed InGaAs quantum dots on GaAs(311)B

We have fabricated highly packed and ordered In0.4Ga0.6As quantum dots (QDs) array on GaAs(311)B substrate without coalescence of QDs. Reflection high-energy electron diffraction and Auger spectra suggest the inhomogeneous distribution of In and Ga in QD. In concentration near the surface of QD is l...

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Veröffentlicht in:Applied physics letters 1998-12, Vol.73 (23), p.3411-3413
Hauptverfasser: Akahane, Kouichi, Kawamura, Takahiro, Okino, Kenji, Koyama, Hiromichi, Lan, Shen, Okada, Yoshitaka, Kawabe, Mitsuo, Tosa, Masahiro
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Sprache:eng
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Zusammenfassung:We have fabricated highly packed and ordered In0.4Ga0.6As quantum dots (QDs) array on GaAs(311)B substrate without coalescence of QDs. Reflection high-energy electron diffraction and Auger spectra suggest the inhomogeneous distribution of In and Ga in QD. In concentration near the surface of QD is larger than that of the inside, and the inhomogeneous distribution of In and Ga in QDs prevents QDs from merging.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.122781