Characteristics of InGaAs quantum dot infrared photodetectors
A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-optic characteris...
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| Veröffentlicht in: | Applied physics letters 1998-11, Vol.73 (21), p.3153-3155 |
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| container_issue | 21 |
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| container_title | Applied physics letters |
| container_volume | 73 |
| creator | Xu, S. J. Chua, S. J. Mei, T. Wang, X. C. Zhang, X. H. Karunasiri, G. Fan, W. J. Wang, C. H. Jiang, J. Wang, S. Xie, X. G. |
| description | A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-optic characteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength. |
| doi_str_mv | 10.1063/1.122703 |
| format | Article |
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G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characteristics of InGaAs quantum dot infrared photodetectors</atitle><jtitle>Applied physics letters</jtitle><date>1998-11-23</date><risdate>1998</risdate><volume>73</volume><issue>21</issue><spage>3153</spage><epage>3155</epage><pages>3153-3155</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-optic characteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength.</abstract><doi>10.1063/1.122703</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
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| ispartof | Applied physics letters, 1998-11, Vol.73 (21), p.3153-3155 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_122703 |
| source | AIP Digital Archive |
| title | Characteristics of InGaAs quantum dot infrared photodetectors |
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