Characteristics of InGaAs quantum dot infrared photodetectors

Characteristics of InGaAs quantum dot infrared photodetectors

A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-optic characteris...

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Veröffentlicht in:Applied physics letters 1998-11, Vol.73 (21), p.3153-3155
Hauptverfasser: Xu, S. J., Chua, S. J., Mei, T., Wang, X. C., Zhang, X. H., Karunasiri, G., Fan, W. J., Wang, C. H., Jiang, J., Wang, S., Xie, X. G.
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Sprache:eng
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Zusammenfassung:A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-optic characteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.122703