Reduction of threading dislocations by InGaAs interlayer in GaAs layers grown on Si substrates

High-quality GaAs epilayers with dislocation densities of 1.2×106 cm−2 on (100)Si substrates have been obtained by insertion of an InGaAs strained interlayer combined with thermal cycle annealing instead of strained layer superlattices. All the layers were grown by low-pressure metalorganic vapor ph...

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Veröffentlicht in:Applied physics letters 1998-11, Vol.73 (20), p.2917-2919
Hauptverfasser: Takano, Y., Hisaka, M., Fujii, N., Suzuki, K., Kuwahara, K., Fuke, S.
Format: Artikel
Sprache:eng
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Zusammenfassung:High-quality GaAs epilayers with dislocation densities of 1.2×106 cm−2 on (100)Si substrates have been obtained by insertion of an InGaAs strained interlayer combined with thermal cycle annealing instead of strained layer superlattices. All the layers were grown by low-pressure metalorganic vapor phase epitaxy. The threading dislocation density near the surface of 4 μm thick GaAs was measured by plan-view transmission electron microscopy. The threading dislocation density was found to be very sensitive to the In composition of the interlayer and the specifics of thermal cycle annealing.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.122629