Bond-length strain in buried Ga1−xInxAs thin-alloy films grown coherently on InP(001)
The bond lengths in a series of strained, buried Ga1−xInxAs thin-alloy films grown coherently on InP(001) have been determined by high-resolution extended x-ray absorption fine-structure measurements. Comparison with a random-cluster calculation demonstrates that the external in-plane epitaxial stra...
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| Veröffentlicht in: | Applied physics letters 1998-08, Vol.73 (9), p.1269-1271 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The bond lengths in a series of strained, buried Ga1−xInxAs thin-alloy films grown coherently on InP(001) have been determined by high-resolution extended x-ray absorption fine-structure measurements. Comparison with a random-cluster calculation demonstrates that the external in-plane epitaxial strain imposed by pseudomorphic growth opposes the natural bond-length distortions due to alloying. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.122371 |