Nanostructure of ordering variants in (AlxGa1−x)0.52In0.48P grown on different vicinal GaAs substrates

We have investigated the nanostructure of ordered (Al0.5Ga0.5)0.52In0.48P using conventional and high-resolution transmission electron microscopy. As in the case of ternary Ga0.52In0.48P, the morphology of the ordered material depends strongly on the substrate orientation. For a substrate orientatio...

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Veröffentlicht in:	Applied physics letters 1998-09, Vol.73 (12), p.1679-1681
Hauptverfasser:	Dörr, U., Kalt, H., Send, W., Gerthsen, D., Mowbray, D. J., Button, C. C.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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