Nanostructure of ordering variants in (AlxGa1−x)0.52In0.48P grown on different vicinal GaAs substrates

We have investigated the nanostructure of ordered (Al0.5Ga0.5)0.52In0.48P using conventional and high-resolution transmission electron microscopy. As in the case of ternary Ga0.52In0.48P, the morphology of the ordered material depends strongly on the substrate orientation. For a substrate orientatio...

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Veröffentlicht in:Applied physics letters 1998-09, Vol.73 (12), p.1679-1681
Hauptverfasser: Dörr, U., Kalt, H., Send, W., Gerthsen, D., Mowbray, D. J., Button, C. C.
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Sprache:eng
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Zusammenfassung:We have investigated the nanostructure of ordered (Al0.5Ga0.5)0.52In0.48P using conventional and high-resolution transmission electron microscopy. As in the case of ternary Ga0.52In0.48P, the morphology of the ordered material depends strongly on the substrate orientation. For a substrate orientation with equal densities of [1̄10] and [11̄0] steps (and, hence, no preference for one particular ordering variant) a nanostructure is found which exhibits similarities to those observed in ternary Ga0.52In0.48P with equivalent substrate orientations. For a substrate orientation which preferentially selects one ordering variant without completely suppressing the formation of the other, we have identified a new type of nanostructure. In this structure, antiphase boundaries between domains containing the preferred variant are frequently formed by thin slices of the suppressed variant. This structural form is directly deduced from high-resolution images.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.122243