Combinatorial synthesis and evaluation of epitaxial ferroelectric device libraries

Combinatorial libraries of parallel-plate capacitors, consisting of Pt and La0.5Sr0.5CoO3 electrodes and a doped BaxSr1−xTiO3 dielectric layer, have been fabricated and analyzed to systematically study the effects of dopants on device performance. Epitaxial heterostructure libraries with sharp inter...

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Veröffentlicht in:	Applied Physics Letters 1998-08, Vol.73 (7), p.894-896
Hauptverfasser:	Takeuchi, I., Chang, H., Gao, C., Schultz, P. G., Xiang, X.-D., Sharma, R. P., Downes, M. J., Venkatesan, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	BARIUM COMPOUNDS BARIUM OXIDES CAPACITORS COBALT OXIDES ELECTRODES ENGINEERING NOT INCLUDED IN OTHER CATEGORIES FERROELECTRIC MATERIALS HETEROJUNCTIONS INTERFACES LANTHANUM OXIDES LEAKAGE CURRENT MATERIALS SCIENCE MEMORY DEVICES STRONTIUM OXIDES TITANIUM OXIDES
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