Combinatorial synthesis and evaluation of epitaxial ferroelectric device libraries

Combinatorial synthesis and evaluation of epitaxial ferroelectric device libraries

Combinatorial libraries of parallel-plate capacitors, consisting of Pt and La0.5Sr0.5CoO3 electrodes and a doped BaxSr1−xTiO3 dielectric layer, have been fabricated and analyzed to systematically study the effects of dopants on device performance. Epitaxial heterostructure libraries with sharp inter...

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Veröffentlicht in:Applied Physics Letters 1998-08, Vol.73 (7), p.894-896
Hauptverfasser: Takeuchi, I., Chang, H., Gao, C., Schultz, P. G., Xiang, X.-D., Sharma, R. P., Downes, M. J., Venkatesan, T.
Format: Artikel
Sprache:eng
Schlagworte:
BARIUM COMPOUNDS
BARIUM OXIDES
CAPACITORS
COBALT OXIDES
ELECTRODES
ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
FERROELECTRIC MATERIALS
HETEROJUNCTIONS
INTERFACES
LANTHANUM OXIDES
LEAKAGE CURRENT
MATERIALS SCIENCE
MEMORY DEVICES
STRONTIUM OXIDES
TITANIUM OXIDES
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Zusammenfassung:Combinatorial libraries of parallel-plate capacitors, consisting of Pt and La0.5Sr0.5CoO3 electrodes and a doped BaxSr1−xTiO3 dielectric layer, have been fabricated and analyzed to systematically study the effects of dopants on device performance. Epitaxial heterostructure libraries with sharp interfaces were generated from amorphous layers on LaAlO3 substrates. Two hundred and forty different host/dopant combinations were synthesized on a 1/2 in. by 1/2 in. substrate, with 23 capacitors for each combination. Addition of 1.5 mol % W was found to increase the figure of merit (ε/Ileak) 220-fold and reduce the high-frequency (MHz and GHz) loss tangent by fourfold.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.122030