Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition

Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition

Extended defect reduction in GaN grown by lateral epitaxial overgrowth (LEO) on large-area SiO2/GaN/Al2O3 wafers by low pressure metalorganic chemical vapor deposition is characterized using transmission electron microscopy and atomic force microscopy. The laterally overgrown GaN (LEO GaN) has a rec...

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Veröffentlicht in:Applied physics letters 1998-08, Vol.73 (6), p.747-749
Hauptverfasser: Marchand, H., Wu, X. H., Ibbetson, J. P., Fini, P. T., Kozodoy, P., Keller, S., Speck, J. S., DenBaars, S. P., Mishra, U. K.
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container_issue 6
container_start_page 747
container_title Applied physics letters
container_volume 73
creator Marchand, H.
Wu, X. H.
Ibbetson, J. P.
Fini, P. T.
Kozodoy, P.
Keller, S.
Speck, J. S.
DenBaars, S. P.
Mishra, U. K.
description Extended defect reduction in GaN grown by lateral epitaxial overgrowth (LEO) on large-area SiO2/GaN/Al2O3 wafers by low pressure metalorganic chemical vapor deposition is characterized using transmission electron microscopy and atomic force microscopy. The laterally overgrown GaN (LEO GaN) has a rectangular cross section with smooth (0001) and {112̄0} facets. The density of mixed-character and pure edge threading dislocations in the LEO GaN (
doi_str_mv 10.1063/1.121988
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A small number of edge dislocations with line directions parallel to the basal plane are generated between the bulk-like overgrown GaN and the LEO GaN regions as well as at the intersection of adjacent merging LEO GaN stripes. 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The density of mixed-character and pure edge threading dislocations in the LEO GaN (&lt;5×106 cm−2) is reduced by at least 3–4 orders of magnitude from that of bulk GaN (∼1010 cm−2). A small number of edge dislocations with line directions parallel to the basal plane are generated between the bulk-like overgrown GaN and the LEO GaN regions as well as at the intersection of adjacent merging LEO GaN stripes. 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title Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
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