Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition

Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition

Extended defect reduction in GaN grown by lateral epitaxial overgrowth (LEO) on large-area SiO2/GaN/Al2O3 wafers by low pressure metalorganic chemical vapor deposition is characterized using transmission electron microscopy and atomic force microscopy. The laterally overgrown GaN (LEO GaN) has a rec...

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Veröffentlicht in:Applied physics letters 1998-08, Vol.73 (6), p.747-749
Hauptverfasser: Marchand, H., Wu, X. H., Ibbetson, J. P., Fini, P. T., Kozodoy, P., Keller, S., Speck, J. S., DenBaars, S. P., Mishra, U. K.
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Sprache:eng
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Zusammenfassung:Extended defect reduction in GaN grown by lateral epitaxial overgrowth (LEO) on large-area SiO2/GaN/Al2O3 wafers by low pressure metalorganic chemical vapor deposition is characterized using transmission electron microscopy and atomic force microscopy. The laterally overgrown GaN (LEO GaN) has a rectangular cross section with smooth (0001) and {112̄0} facets. The density of mixed-character and pure edge threading dislocations in the LEO GaN (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.121988