Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates

Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates

The electrical characteristics of Ni and Ti Schottky barriers on n-Al0.15Ga0.85N on SiC were investigated. We report that the barrier height for Ni on n-Al0.15Ga0.85N was about 1.26 eV and about 1 eV or less for Ti. These barrier heights are about 0.3–0.4 eV larger than those for Ni and Ti on n-GaN,...

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Veröffentlicht in:Applied physics letters 1998-07, Vol.73 (2), p.238-240
Hauptverfasser: Yu, L. S., Qiao, D. J., Xing, Q. J., Lau, S. S., Boutros, K. S., Redwing, J. M.
Format: Artikel
Sprache:eng
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Zusammenfassung:The electrical characteristics of Ni and Ti Schottky barriers on n-Al0.15Ga0.85N on SiC were investigated. We report that the barrier height for Ni on n-Al0.15Ga0.85N was about 1.26 eV and about 1 eV or less for Ti. These barrier heights are about 0.3–0.4 eV larger than those for Ni and Ti on n-GaN, which are in good agreement with Schottky model predictions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.121767