Low-temperature Si epitaxy with high deposition rate using ion-assisted deposition
Ion-assisted deposition is suitable for the formation of epitaxial Si films at high deposition rate and low substrate temperature. We demonstrate epitaxial deposition of Si films on (100)-oriented Si wafers using deposition rates up to 0.3 μm/min at deposition temperatures in the range of 500–650 °C...
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Veröffentlicht in: | Applied physics letters 1998-06, Vol.72 (23), p.2996-2998 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Ion-assisted deposition is suitable for the formation of epitaxial Si films at high deposition rate and low substrate temperature. We demonstrate epitaxial deposition of Si films on (100)-oriented Si wafers using deposition rates up to 0.3 μm/min at deposition temperatures in the range of 500–650 °C. Hall-effect measurements show a majority carrier mobility of 200 cm2/V s at a hole concentration of 1.4×1017 cm−3 in our films. A minority carrier diffusion length of 4.5 μm is determined from quantum efficiency measurements in the epitaxially grown Si films. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.121519 |