Low-temperature Si epitaxy with high deposition rate using ion-assisted deposition

Ion-assisted deposition is suitable for the formation of epitaxial Si films at high deposition rate and low substrate temperature. We demonstrate epitaxial deposition of Si films on (100)-oriented Si wafers using deposition rates up to 0.3 μm/min at deposition temperatures in the range of 500–650 °C...

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Veröffentlicht in:Applied physics letters 1998-06, Vol.72 (23), p.2996-2998
Hauptverfasser: Bergmann, R. B., Zaczek, C., Jensen, N., Oelting, S., Werner, J. H.
Format: Artikel
Sprache:eng
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Zusammenfassung:Ion-assisted deposition is suitable for the formation of epitaxial Si films at high deposition rate and low substrate temperature. We demonstrate epitaxial deposition of Si films on (100)-oriented Si wafers using deposition rates up to 0.3 μm/min at deposition temperatures in the range of 500–650 °C. Hall-effect measurements show a majority carrier mobility of 200 cm2/V s at a hole concentration of 1.4×1017 cm−3 in our films. A minority carrier diffusion length of 4.5 μm is determined from quantum efficiency measurements in the epitaxially grown Si films.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.121519