Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

InGaN multi-quantum-well-structure laser diodes (LDs) grown on GaN substrates were demonstrated. The LDs showed a small thermal resistance of 30 °C/W and a lifetime longer than 780 h despite a large threshold current density of 7 kA/cm2. In contrast, the LDs grown on a sapphire substrate exhibited a...

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Veröffentlicht in:Applied physics letters 1998-04, Vol.72 (16), p.2014-2016
Hauptverfasser: Nakamura, Shuji, Senoh, Masayuki, Nagahama, Shin-ichi, Iwasa, Naruhito, Yamada, Takao, Matsushita, Toshio, Kiyoku, Hiroyuki, Sugimoto, Yasunobu, Kozaki, Tokuya, Umemoto, Hitoshi, Sano, Masahiko, Chocho, Kazuyuki
Format: Artikel
Sprache:eng
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Zusammenfassung:InGaN multi-quantum-well-structure laser diodes (LDs) grown on GaN substrates were demonstrated. The LDs showed a small thermal resistance of 30 °C/W and a lifetime longer than 780 h despite a large threshold current density of 7 kA/cm2. In contrast, the LDs grown on a sapphire substrate exhibited a high thermal resistance of 60 °C/W and a short lifetime of 200 h under room-temperature continuous-wave operation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.121250