The effect of composition on the thermal stability of Si1−x−yGexCy/Si heterostructures

The thermal stability of molecular beam epitaxy grown Si1−x−yGexCy/Si heterostructures (0⩽x

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Veröffentlicht in:	Applied physics letters 1998-04, Vol.72 (16), p.1972-1974
Hauptverfasser:	Kulik, L. V., Hits, D. A., Dashiell, M. W., Kolodzey, J.
Format:	Artikel
Sprache:	eng
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container_end_page	1974
container_issue	16
container_start_page	1972
container_title	Applied physics letters
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creator	Kulik, L. V. Hits, D. A. Dashiell, M. W. Kolodzey, J.
description	The thermal stability of molecular beam epitaxy grown Si1−x−yGexCy/Si heterostructures (0⩽x
doi_str_mv	10.1063/1.121238
format	Article
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V. ; Hits, D. A. ; Dashiell, M. W. ; Kolodzey, J.</creator><creatorcontrib>Kulik, L. V. ; Hits, D. A. ; Dashiell, M. W. ; Kolodzey, J.</creatorcontrib><description>The thermal stability of molecular beam epitaxy grown Si1−x−yGexCy/Si heterostructures (0⩽x<0.30, y∼0.008) was studied using infrared absorption spectroscopy. The local vibrational mode of C in Si and Si1−x−yGex was used to quantify the loss of C atoms from substitutional sites with high temperature annealing. The activation energy (Ea=4.9 eV) for the loss of substitutional C achieved a maximum for the strain compensated alloy (x∼0.1). An additional increase of Ge content resulted in a rapid decrease in Ea, which was found to be 3.4 eV for x∼0.27. 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The local vibrational mode of C in Si and Si1−x−yGex was used to quantify the loss of C atoms from substitutional sites with high temperature annealing. The activation energy (Ea=4.9 eV) for the loss of substitutional C achieved a maximum for the strain compensated alloy (x∼0.1). An additional increase of Ge content resulted in a rapid decrease in Ea, which was found to be 3.4 eV for x∼0.27. The nonmonotonic behavior of Ea on Ge content is explained by the effect of the interface strain between the epitaxial layer and Si substrate.</abstract><doi>10.1063/1.121238</doi><tpages>3</tpages></addata></record>
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title	The effect of composition on the thermal stability of Si1−x−yGexCy/Si heterostructures
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