1.3 μm photoresponsivity in Si-based Ge1−xCx photodiodes
Ge 1−x C x /Si heterostructure photodiodes with nominal carbon percentages (0⩽x⩽0.02), which exceed the solubility limit, were grown by solid source molecular beam epitaxy on n-type (100) Si substrates. The p-Ge1−xCx/n-Si photodiodes were fabricated and tested. The p-Ge1−xCx/n-Si junction exhibits d...
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Veröffentlicht in: | Applied physics letters 1998-04, Vol.72 (15), p.1860-1862 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Ge 1−x C x /Si heterostructure photodiodes with nominal carbon percentages (0⩽x⩽0.02), which exceed the solubility limit, were grown by solid source molecular beam epitaxy on n-type (100) Si substrates. The p-Ge1−xCx/n-Si photodiodes were fabricated and tested. The p-Ge1−xCx/n-Si junction exhibits diode rectification with a reverse saturation current of about 10 pA/μm2 at −1 V and high reverse breakdown voltage, up to −80 V. A significant reduction in diode reverse leakage current was observed by adding C to Ge, but these effects saturated with more C. Photoresponsivity was observed from these Si-based p-Ge1−xCx/n-Si photodiodes at a wavelength of ⩾1.3 μm, compatible with fiber optic wavelengths. External quantum efficiency of these thin surface-normal photodetectors was measured up to 2.2%, which decreased as the carbon percentage was increased. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.121207 |