1.3 μm photoresponsivity in Si-based Ge1−xCx photodiodes

Ge 1−x C x /Si heterostructure photodiodes with nominal carbon percentages (0⩽x⩽0.02), which exceed the solubility limit, were grown by solid source molecular beam epitaxy on n-type (100) Si substrates. The p-Ge1−xCx/n-Si photodiodes were fabricated and tested. The p-Ge1−xCx/n-Si junction exhibits d...

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Veröffentlicht in:Applied physics letters 1998-04, Vol.72 (15), p.1860-1862
Hauptverfasser: Shao, Xiaoping, Rommel, S. L., Orner, B. A., Feng, H., Dashiell, M. W., Troeger, R. T., Kolodzey, J., Berger, Paul R., Laursen, Thomas
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Sprache:eng
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Zusammenfassung:Ge 1−x C x /Si heterostructure photodiodes with nominal carbon percentages (0⩽x⩽0.02), which exceed the solubility limit, were grown by solid source molecular beam epitaxy on n-type (100) Si substrates. The p-Ge1−xCx/n-Si photodiodes were fabricated and tested. The p-Ge1−xCx/n-Si junction exhibits diode rectification with a reverse saturation current of about 10 pA/μm2 at −1 V and high reverse breakdown voltage, up to −80 V. A significant reduction in diode reverse leakage current was observed by adding C to Ge, but these effects saturated with more C. Photoresponsivity was observed from these Si-based p-Ge1−xCx/n-Si photodiodes at a wavelength of ⩾1.3 μm, compatible with fiber optic wavelengths. External quantum efficiency of these thin surface-normal photodetectors was measured up to 2.2%, which decreased as the carbon percentage was increased.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.121207