Temperature dependence of a high-Tc single-flux-quantum logic gate up to 50 K
Basic characteristics of a simple single-flux-quantum (SFQ) logic gate using high-Tc material and Josephson junction (NdBa2Cu3O7−δ and focused ion beam junction) have been investigated. The logic gate consists of an rf-superconducting quantum interference device (rf-SQUID) and a dc-SQUID. In the log...
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Veröffentlicht in: | Applied physics letters 1998-05, Vol.72 (21), p.2754-2756 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Basic characteristics of a simple single-flux-quantum (SFQ) logic gate using high-Tc material and Josephson junction (NdBa2Cu3O7−δ and focused ion beam junction) have been investigated. The logic gate consists of an rf-superconducting quantum interference device (rf-SQUID) and a dc-SQUID. In the logic gate, elementary SFQ logic operations, such as generating SFQ (dc/SFQ) and providing simultaneous readout (SFQ/dc), have been confirmed up to 50 K. The temperature dependencies of the output voltage level and the critical current-normal resistance (IcRn) product were compared, and the decreasing tendency of the output voltage level for increasing temperature was found to be more rapid than that of the IcRn product. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.121080 |