Fabrication of a low-operating voltage diamond thin film metal–semiconductor–metal photodetector by laser writing lithography

An ultraviolet-sensitive photodetector based on the metal-semiconductor-metal structure has been fabricated on a chemical-vapor-deposited diamond thin film grown on a silicon substrate. Device processing techniques employed include maskless laser writing lithography, image reversal processing and sacrificial layer inclusion, which resulted in devices with an electrode finger separation of only 2.5 μm. This allows for a low operating voltage of only 5 V, which is very much lower than what has been achieved so far.