Temperature dependence of mobility in n-type short-period Si–Ge superlattices

We have studied the mobility and carrier concentration as a function of temperature between 4 and 300 K in n-type Si–Ge short-period superlattices. In the parallel transport configuration, we have measured a mobility ratio μ77/μ300>50 in an n-type strained-layer superlattice with a carrier concen...

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Veröffentlicht in:	Applied physics letters 1998-01, Vol.72 (1), p.76-78
Hauptverfasser:	Pearsall, T. P., DiVergilio, A., Gassot, Pierre, Maude, Duncan, Presting, Hartmut, Kasper, Erich, Jäger, W., Stenkamp, Dirk
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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