Temperature dependence of mobility in n-type short-period Si–Ge superlattices

We have studied the mobility and carrier concentration as a function of temperature between 4 and 300 K in n-type Si–Ge short-period superlattices. In the parallel transport configuration, we have measured a mobility ratio μ77/μ300>50 in an n-type strained-layer superlattice with a carrier concen...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1998-01, Vol.72 (1), p.76-78
Hauptverfasser: Pearsall, T. P., DiVergilio, A., Gassot, Pierre, Maude, Duncan, Presting, Hartmut, Kasper, Erich, Jäger, W., Stenkamp, Dirk
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We have studied the mobility and carrier concentration as a function of temperature between 4 and 300 K in n-type Si–Ge short-period superlattices. In the parallel transport configuration, we have measured a mobility ratio μ77/μ300>50 in an n-type strained-layer superlattice with a carrier concentration in the mid 1016 cm−3 range. The peak mobility measured was 17 000 cm2/V s−1 at 70 K. Carrier freeze-out effects frustrated transport measurements below 60 K. Above 80 K the mobility is limited by optical phonon scattering with a characteristic phonon energy of 60 meV. These characteristics indicate electron transport via extended states.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.120649