Temperature dependence of mobility in n-type short-period Si–Ge superlattices
We have studied the mobility and carrier concentration as a function of temperature between 4 and 300 K in n-type Si–Ge short-period superlattices. In the parallel transport configuration, we have measured a mobility ratio μ77/μ300>50 in an n-type strained-layer superlattice with a carrier concen...
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Veröffentlicht in: | Applied physics letters 1998-01, Vol.72 (1), p.76-78 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We have studied the mobility and carrier concentration as a function of temperature between 4 and 300 K in n-type Si–Ge short-period superlattices. In the parallel transport configuration, we have measured a mobility ratio μ77/μ300>50 in an n-type strained-layer superlattice with a carrier concentration in the mid 1016 cm−3 range. The peak mobility measured was 17 000 cm2/V s−1 at 70 K. Carrier freeze-out effects frustrated transport measurements below 60 K. Above 80 K the mobility is limited by optical phonon scattering with a characteristic phonon energy of 60 meV. These characteristics indicate electron transport via extended states. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.120649 |