Polarization field effects on the electron-hole recombination dynamics in In0.2Ga0.8N/In1−xGaxN multiple quantum wells
The effect of the polarization field in wurtzite In0.2Ga0.8N/In1−xGaxN (x>0.8) multiple quantum wells is studied from first principles. The pyroelectric and piezoelectric fields naturally present in the system due to its wurtzite structure are strong enough to reduce the interband recombination r...
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| Veröffentlicht in: | Applied physics letters 1997-11, Vol.71 (21), p.3135-3137 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The effect of the polarization field in wurtzite In0.2Ga0.8N/In1−xGaxN (x>0.8) multiple quantum wells is studied from first principles. The pyroelectric and piezoelectric fields naturally present in the system due to its wurtzite structure are strong enough to reduce the interband recombination rate in an ideal quantum well. We suggest that composition fluctuations, observed in the active region of actual devices, provide the necessary confinement for an improved recombination rate and lasing. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.120269 |