Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

Electron concentration profiles have been obtained for AlxGa1−xN/GaN heterostructure field-effect transistor structures. Analysis of the measured electron distributions demonstrates the influence of piezoelectric effects in coherently strained layers on III-V nitride heterostructure device character...

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Veröffentlicht in:Applied physics letters 1997-11, Vol.71 (19), p.2794-2796
Hauptverfasser: Yu, E. T., Sullivan, G. J., Asbeck, P. M., Wang, C. D., Qiao, D., Lau, S. S.
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Sprache:eng
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Zusammenfassung:Electron concentration profiles have been obtained for AlxGa1−xN/GaN heterostructure field-effect transistor structures. Analysis of the measured electron distributions demonstrates the influence of piezoelectric effects in coherently strained layers on III-V nitride heterostructure device characteristics. Characterization of a nominally undoped Al0.15Ga0.85N/GaN transistor structure reveals the presence of a high sheet carrier density in the GaN channel which may be explained as a consequence of piezoelectrically induced charges present at the Al0.15Ga0.85N/GaN interface. Measurements performed on an Al0.15Ga0.85N/GaN transistor structure with a buried Al0.15Ga0.85N isolation layer indicate a reduction in electron sheet concentration in the transistor channel and accumulation of carriers below the Al0.15Ga0.85N isolation layer, both of which are attributable to piezoelectric effects.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.120138