Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation

Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation

We report the implementation of ion-cut silicon-on-insulator (SOI) wafer fabrication technique with plasma immersion ion implantation (PIII). The hydrogen implantation rate, which is independent of the wafer size, is considerably higher than that of conventional implantation. The simple PIII reactor...

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Veröffentlicht in:Applied physics letters 1997-11, Vol.71 (19), p.2767-2769
Hauptverfasser: Lu, Xiang, Iyer, S. Sundar Kumar, Hu, Chenming, Cheung, Nathan W., Min, Jing, Fan, Zhineng, Chu, Paul K.
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container_end_page 2769
container_issue 19
container_start_page 2767
container_title Applied physics letters
container_volume 71
creator Lu, Xiang
Iyer, S. Sundar Kumar
Hu, Chenming
Cheung, Nathan W.
Min, Jing
Fan, Zhineng
Chu, Paul K.
description We report the implementation of ion-cut silicon-on-insulator (SOI) wafer fabrication technique with plasma immersion ion implantation (PIII). The hydrogen implantation rate, which is independent of the wafer size, is considerably higher than that of conventional implantation. The simple PIII reactor setup and its compatibility with cluster-tools offer other ion-cut process optimization opportunities. The feasibility of the PIII ion-cut process is demonstrated by successful fabrication of SOI structures. The hydrogen plasma can be optimized so that only one ion species is dominant. The feasibility of performing ion-cut using helium PIII is also demonstrated.
doi_str_mv 10.1063/1.120127
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title Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation
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