Quantitative inelastic tunneling spectroscopy in the silicon metal-oxide-semiconductor system

A dual temperature method has been developed for subtracting the 77 K thermally smoothed background from 4.2 K inelastic electron tunneling spectra of ultrathin dielectric metal-insulator-semiconductor junctions. A mode resolving method applied to the remaining spectrum clearly identifies electrode...

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Veröffentlicht in:	Applied physics letters 1997-10, Vol.71 (17), p.2523-2525
Hauptverfasser:	Lye, Whye-Kei, Hasegawa, Eiji, Ma, Tso-Ping, Barker, Richard C., Hu, Yin, Kuehne, John, Frystak, David
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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