Quantitative inelastic tunneling spectroscopy in the silicon metal-oxide-semiconductor system
A dual temperature method has been developed for subtracting the 77 K thermally smoothed background from 4.2 K inelastic electron tunneling spectra of ultrathin dielectric metal-insulator-semiconductor junctions. A mode resolving method applied to the remaining spectrum clearly identifies electrode...
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Veröffentlicht in: | Applied physics letters 1997-10, Vol.71 (17), p.2523-2525 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | A dual temperature method has been developed for subtracting the 77 K thermally smoothed background from 4.2 K inelastic electron tunneling spectra of ultrathin dielectric metal-insulator-semiconductor junctions. A mode resolving method applied to the remaining spectrum clearly identifies electrode and insulator vibrational modes. The ability to track these relative mode positions and amplitudes shows promise as a unique interface analysis and process diagnostic method. Results are reported on polycrystalline silicon gate, 1.5-nm-thick oxide devices fabricated on 1–10 Ω cm, N-type, (100) silicon substrates by a standard industrial process sequence. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.120106 |