Fourth power law of time dependence of Si adsorbate diffusion on a Si(001) surface

Diffusion of Si adsorbates deposited on a Si(001) surface is investigated by reflection electron microscopy. At temperatures up to about 600 °C, the diffused length x of the adsorbates is proportional to t1/4 before the critical time tc, where t is the heating time. At ttc, the diffused length x is...

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Veröffentlicht in:Applied physics letters 1997-10, Vol.71 (14), p.1993-1995
Hauptverfasser: Doi, Takahisa, Ichikawa, Masakazu, Hosoki, Shigeyuki
Format: Artikel
Sprache:eng
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Zusammenfassung:Diffusion of Si adsorbates deposited on a Si(001) surface is investigated by reflection electron microscopy. At temperatures up to about 600 °C, the diffused length x of the adsorbates is proportional to t1/4 before the critical time tc, where t is the heating time. At ttc, the diffused length x is proportional to t1/2, where x is determined by thermal diffusion of the adsorbates.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.119765