Fourth power law of time dependence of Si adsorbate diffusion on a Si(001) surface
Diffusion of Si adsorbates deposited on a Si(001) surface is investigated by reflection electron microscopy. At temperatures up to about 600 °C, the diffused length x of the adsorbates is proportional to t1/4 before the critical time tc, where t is the heating time. At ttc, the diffused length x is...
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Veröffentlicht in: | Applied physics letters 1997-10, Vol.71 (14), p.1993-1995 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Diffusion of Si adsorbates deposited on a Si(001) surface is investigated by reflection electron microscopy. At temperatures up to about 600 °C, the diffused length x of the adsorbates is proportional to t1/4 before the critical time tc, where t is the heating time. At ttc, the diffused length x is proportional to t1/2, where x is determined by thermal diffusion of the adsorbates. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.119765 |