Hot electron relaxation dynamics in ZnSe

The ultrafast relaxation dynamics of hot electrons, initially photoexcited with an excess energy of 300 meV, are monitored in a high-quality ZnSe epilayer grown on a GaAs substrate by exploiting the intrinsic interferrometric asymmetric Fabry–Perot sample structure. The results are consistent with t...

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Veröffentlicht in:Applied physics letters 1997-08, Vol.71 (8), p.1089-1091
Hauptverfasser: Mehendale, Manjusha, Sivananthan, S., Andreas Schroeder, W.
Format: Artikel
Sprache:eng
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Zusammenfassung:The ultrafast relaxation dynamics of hot electrons, initially photoexcited with an excess energy of 300 meV, are monitored in a high-quality ZnSe epilayer grown on a GaAs substrate by exploiting the intrinsic interferrometric asymmetric Fabry–Perot sample structure. The results are consistent with the expected characteristic electronic LO-phonon emission time of 40–50 fs and provide evidence for the influence of the “hot phonon effect”(or “LO-phonon bottleneck”) on the electron cooling dynamics at carrier densities above ∼3×1017 cm−3.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.119736