Hot electron relaxation dynamics in ZnSe
The ultrafast relaxation dynamics of hot electrons, initially photoexcited with an excess energy of 300 meV, are monitored in a high-quality ZnSe epilayer grown on a GaAs substrate by exploiting the intrinsic interferrometric asymmetric Fabry–Perot sample structure. The results are consistent with t...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 1997-08, Vol.71 (8), p.1089-1091 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The ultrafast relaxation dynamics of hot electrons, initially photoexcited with an excess energy of 300 meV, are monitored in a high-quality ZnSe epilayer grown on a GaAs substrate by exploiting the intrinsic interferrometric asymmetric Fabry–Perot sample structure. The results are consistent with the expected characteristic electronic LO-phonon emission time of 40–50 fs and provide evidence for the influence of the “hot phonon effect”(or “LO-phonon bottleneck”) on the electron cooling dynamics at carrier densities above ∼3×1017 cm−3. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.119736 |