Electro-optic birefringence in semiconductor vertical-cavity lasers

Electro-optic birefringence in semiconductor vertical-cavity lasers

Birefringence induced by the electro-optic effect is demonstrated in vertical-cavity surface-emitting lasers (VCSEL). This is done by comparing two types of optically pumped VCSELs: VCSELs with standard pin-doping and VCSELs with symmetrical pip-doping. The observed birefringence in these VCSELs dif...

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Veröffentlicht in:Applied physics letters 1997-11, Vol.71 (18), p.2599-2601
Hauptverfasser: Hendriks, R. F. M., van Exter, M. P., Woerdman, J. P., van Geelen, A., Weegels, L., Gulden, K. H., Moser, M.
Format: Artikel
Sprache:eng
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Zusammenfassung:Birefringence induced by the electro-optic effect is demonstrated in vertical-cavity surface-emitting lasers (VCSEL). This is done by comparing two types of optically pumped VCSELs: VCSELs with standard pin-doping and VCSELs with symmetrical pip-doping. The observed birefringence in these VCSELs differs by an order of magnitude, a difference that we ascribe to the presence and absence, respectively, of electro-optic birefringence.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.119340