Reverse current transient behavior in amorphous silicon Schottky diodes at low biases

The application of hydrogenated amorphous silicon Schottky diodes to large-area imaging requires knowledge of the variation in reverse-bias current over long timescales. When the diode is subject to electrical stress, a power-law dependence of reverse current with time is observed. This is followed by a stretched-exponential behavior during the subsequent zero-bias recovery period. Both of these results are attributed to dispersive electron transport in the Schottky diode.