Improvement of the dielectric properties of Ta2O5 through substitution with Al2O3

Improvement of the dielectric properties of Ta2O5 through substitution with Al2O3

For bulk ceramic materials, small substitutions of Al2O3 in Ta2O5 are shown to cause a moderate enhancement of the dielectric constant. For compositions near 0.95Ta2O5–0.05Al2O3, the temperature coefficient of the dielectric constant at 20 °C dramatically decreases, from more than 200 ppm/°C for pur...

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Veröffentlicht in:Applied physics letters 1997-03, Vol.70 (11), p.1396-1398
Hauptverfasser: Cava, R. J., Peck, W. F., Krajewski, J. J., Roberts, G. L., Barber, B. P., O’Bryan, H. M., Gammel, P. L.
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container_end_page 1398
container_issue 11
container_start_page 1396
container_title Applied physics letters
container_volume 70
creator Cava, R. J.
Peck, W. F.
Krajewski, J. J.
Roberts, G. L.
Barber, B. P.
O’Bryan, H. M.
Gammel, P. L.
description For bulk ceramic materials, small substitutions of Al2O3 in Ta2O5 are shown to cause a moderate enhancement of the dielectric constant. For compositions near 0.95Ta2O5–0.05Al2O3, the temperature coefficient of the dielectric constant at 20 °C dramatically decreases, from more than 200 ppm/°C for pure Ta2O5 to less than 20 ppm/°C. The quality factors (Q) at 1 MHz, are 2000–5000. Measurements to 14 GHz at 20 °C show that the dielectric constant is maintained to microwave frequencies, with a Q of ∼600 at 5 GHz.
doi_str_mv 10.1063/1.119088
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_119088</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_119088</sourcerecordid><originalsourceid>FETCH-LOGICAL-c225t-dd303bd50edf3ed7128c907f1109d7ce7c02d87b43ad8fdebfe0a77125beb7af3</originalsourceid><addsrcrecordid>eNotkF1LwzAYhYMoWKfgT8ilN53vm9glvRzDj8GgCPO6tMkbG2nXkaSK_96OeXU4nIdz8TB2j7BEWMlHXCKWoPUFyxCUyiWivmQZAMh8VRZ4zW5i_JprIaTM2Pt2OIbxmwY6JD46njri1lNPJgVv-LwdKSRP8TTuG1EVMxLG6bPjcWpj8mlKfjzwH586vu5FJW_ZlWv6SHf_uWAfL8_7zVu-q163m_UuN0IUKbdWgmxtAWSdJKtQaFOCcohQWmVIGRBWq_ZJNlY7S60jaNSMFS21qnFywR7OvyaMMQZy9TH4oQm_NUJ9UlFjfVYh_wC5J1Gs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Improvement of the dielectric properties of Ta2O5 through substitution with Al2O3</title><source>AIP Digital Archive</source><creator>Cava, R. J. ; Peck, W. F. ; Krajewski, J. J. ; Roberts, G. L. ; Barber, B. P. ; O’Bryan, H. M. ; Gammel, P. L.</creator><creatorcontrib>Cava, R. J. ; Peck, W. F. ; Krajewski, J. J. ; Roberts, G. L. ; Barber, B. P. ; O’Bryan, H. M. ; Gammel, P. L.</creatorcontrib><description>For bulk ceramic materials, small substitutions of Al2O3 in Ta2O5 are shown to cause a moderate enhancement of the dielectric constant. For compositions near 0.95Ta2O5–0.05Al2O3, the temperature coefficient of the dielectric constant at 20 °C dramatically decreases, from more than 200 ppm/°C for pure Ta2O5 to less than 20 ppm/°C. The quality factors (Q) at 1 MHz, are 2000–5000. Measurements to 14 GHz at 20 °C show that the dielectric constant is maintained to microwave frequencies, with a Q of ∼600 at 5 GHz.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.119088</identifier><language>eng</language><ispartof>Applied physics letters, 1997-03, Vol.70 (11), p.1396-1398</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c225t-dd303bd50edf3ed7128c907f1109d7ce7c02d87b43ad8fdebfe0a77125beb7af3</citedby><cites>FETCH-LOGICAL-c225t-dd303bd50edf3ed7128c907f1109d7ce7c02d87b43ad8fdebfe0a77125beb7af3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Cava, R. J.</creatorcontrib><creatorcontrib>Peck, W. F.</creatorcontrib><creatorcontrib>Krajewski, J. J.</creatorcontrib><creatorcontrib>Roberts, G. L.</creatorcontrib><creatorcontrib>Barber, B. P.</creatorcontrib><creatorcontrib>O’Bryan, H. M.</creatorcontrib><creatorcontrib>Gammel, P. L.</creatorcontrib><title>Improvement of the dielectric properties of Ta2O5 through substitution with Al2O3</title><title>Applied physics letters</title><description>For bulk ceramic materials, small substitutions of Al2O3 in Ta2O5 are shown to cause a moderate enhancement of the dielectric constant. For compositions near 0.95Ta2O5–0.05Al2O3, the temperature coefficient of the dielectric constant at 20 °C dramatically decreases, from more than 200 ppm/°C for pure Ta2O5 to less than 20 ppm/°C. The quality factors (Q) at 1 MHz, are 2000–5000. Measurements to 14 GHz at 20 °C show that the dielectric constant is maintained to microwave frequencies, with a Q of ∼600 at 5 GHz.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNotkF1LwzAYhYMoWKfgT8ilN53vm9glvRzDj8GgCPO6tMkbG2nXkaSK_96OeXU4nIdz8TB2j7BEWMlHXCKWoPUFyxCUyiWivmQZAMh8VRZ4zW5i_JprIaTM2Pt2OIbxmwY6JD46njri1lNPJgVv-LwdKSRP8TTuG1EVMxLG6bPjcWpj8mlKfjzwH586vu5FJW_ZlWv6SHf_uWAfL8_7zVu-q163m_UuN0IUKbdWgmxtAWSdJKtQaFOCcohQWmVIGRBWq_ZJNlY7S60jaNSMFS21qnFywR7OvyaMMQZy9TH4oQm_NUJ9UlFjfVYh_wC5J1Gs</recordid><startdate>19970317</startdate><enddate>19970317</enddate><creator>Cava, R. J.</creator><creator>Peck, W. F.</creator><creator>Krajewski, J. J.</creator><creator>Roberts, G. L.</creator><creator>Barber, B. P.</creator><creator>O’Bryan, H. M.</creator><creator>Gammel, P. L.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19970317</creationdate><title>Improvement of the dielectric properties of Ta2O5 through substitution with Al2O3</title><author>Cava, R. J. ; Peck, W. F. ; Krajewski, J. J. ; Roberts, G. L. ; Barber, B. P. ; O’Bryan, H. M. ; Gammel, P. L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c225t-dd303bd50edf3ed7128c907f1109d7ce7c02d87b43ad8fdebfe0a77125beb7af3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cava, R. J.</creatorcontrib><creatorcontrib>Peck, W. F.</creatorcontrib><creatorcontrib>Krajewski, J. J.</creatorcontrib><creatorcontrib>Roberts, G. L.</creatorcontrib><creatorcontrib>Barber, B. P.</creatorcontrib><creatorcontrib>O’Bryan, H. M.</creatorcontrib><creatorcontrib>Gammel, P. L.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cava, R. J.</au><au>Peck, W. F.</au><au>Krajewski, J. J.</au><au>Roberts, G. L.</au><au>Barber, B. P.</au><au>O’Bryan, H. M.</au><au>Gammel, P. L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improvement of the dielectric properties of Ta2O5 through substitution with Al2O3</atitle><jtitle>Applied physics letters</jtitle><date>1997-03-17</date><risdate>1997</risdate><volume>70</volume><issue>11</issue><spage>1396</spage><epage>1398</epage><pages>1396-1398</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>For bulk ceramic materials, small substitutions of Al2O3 in Ta2O5 are shown to cause a moderate enhancement of the dielectric constant. For compositions near 0.95Ta2O5–0.05Al2O3, the temperature coefficient of the dielectric constant at 20 °C dramatically decreases, from more than 200 ppm/°C for pure Ta2O5 to less than 20 ppm/°C. The quality factors (Q) at 1 MHz, are 2000–5000. Measurements to 14 GHz at 20 °C show that the dielectric constant is maintained to microwave frequencies, with a Q of ∼600 at 5 GHz.</abstract><doi>10.1063/1.119088</doi><tpages>3</tpages></addata></record>
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title Improvement of the dielectric properties of Ta2O5 through substitution with Al2O3
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T05%3A44%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Improvement%20of%20the%20dielectric%20properties%20of%20Ta2O5%20through%20substitution%20with%20Al2O3&rft.jtitle=Applied%20physics%20letters&rft.au=Cava,%20R.%20J.&rft.date=1997-03-17&rft.volume=70&rft.issue=11&rft.spage=1396&rft.epage=1398&rft.pages=1396-1398&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.119088&rft_dat=%3Ccrossref%3E10_1063_1_119088%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true