Improvement of the dielectric properties of Ta2O5 through substitution with Al2O3
For bulk ceramic materials, small substitutions of Al2O3 in Ta2O5 are shown to cause a moderate enhancement of the dielectric constant. For compositions near 0.95Ta2O5–0.05Al2O3, the temperature coefficient of the dielectric constant at 20 °C dramatically decreases, from more than 200 ppm/°C for pur...
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Veröffentlicht in: | Applied physics letters 1997-03, Vol.70 (11), p.1396-1398 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | For bulk ceramic materials, small substitutions of Al2O3 in Ta2O5 are shown to cause a moderate enhancement of the dielectric constant. For compositions near 0.95Ta2O5–0.05Al2O3, the temperature coefficient of the dielectric constant at 20 °C dramatically decreases, from more than 200 ppm/°C for pure Ta2O5 to less than 20 ppm/°C. The quality factors (Q) at 1 MHz, are 2000–5000. Measurements to 14 GHz at 20 °C show that the dielectric constant is maintained to microwave frequencies, with a Q of ∼600 at 5 GHz. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.119088 |