Improvement of the dielectric properties of Ta2O5 through substitution with Al2O3

For bulk ceramic materials, small substitutions of Al2O3 in Ta2O5 are shown to cause a moderate enhancement of the dielectric constant. For compositions near 0.95Ta2O5–0.05Al2O3, the temperature coefficient of the dielectric constant at 20 °C dramatically decreases, from more than 200 ppm/°C for pur...

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Veröffentlicht in:Applied physics letters 1997-03, Vol.70 (11), p.1396-1398
Hauptverfasser: Cava, R. J., Peck, W. F., Krajewski, J. J., Roberts, G. L., Barber, B. P., O’Bryan, H. M., Gammel, P. L.
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Sprache:eng
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Zusammenfassung:For bulk ceramic materials, small substitutions of Al2O3 in Ta2O5 are shown to cause a moderate enhancement of the dielectric constant. For compositions near 0.95Ta2O5–0.05Al2O3, the temperature coefficient of the dielectric constant at 20 °C dramatically decreases, from more than 200 ppm/°C for pure Ta2O5 to less than 20 ppm/°C. The quality factors (Q) at 1 MHz, are 2000–5000. Measurements to 14 GHz at 20 °C show that the dielectric constant is maintained to microwave frequencies, with a Q of ∼600 at 5 GHz.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.119088