Enhanced electroabsorption in tensile-strained GayIn1−yAs/AlxIn1−xAs/InP quantum well structures, due to field-induced merging of light-hole and heavy-hole transitions

Enhanced electroabsorption in tensile-strained GayIn1−yAs/AlxIn1−xAs/InP quantum well structures, due to field-induced merging of light-hole and heavy-hole transitions

Enhanced electroabsorption, due to field-induced degeneration of light-hole and heavy-hole states, is found in tensile-strained Ga0.53In0.47As quantum wells with Al0.48In0.52As barriers. This behavior seems to be specific for the AlGaInAs material system, where the Stark shift is dominated by heavy...

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Veröffentlicht in:Applied physics letters 1997-05, Vol.70 (21), p.2855-2857
Hauptverfasser: Schwander, T., Anhegger, M., Bürger, N., Feifel, T., Hirche, K., Korn, M., Panzlaff, K., Schröter, S., Warth, M., König, P., Hangleiter, A.
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Sprache:eng
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Zusammenfassung:Enhanced electroabsorption, due to field-induced degeneration of light-hole and heavy-hole states, is found in tensile-strained Ga0.53In0.47As quantum wells with Al0.48In0.52As barriers. This behavior seems to be specific for the AlGaInAs material system, where the Stark shift is dominated by heavy holes rather than by electrons. The effect, predicted theoretically by band structure calculations, is verified by differential electrotransmission experiments at 300 and 77 K.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.119023