Metalorganic vapor-phase epitaxy of cubic AlxGa1−xN alloy on a GaAs (100) substrate

Cubic AlxGa1−xN was grown on a GaAs (100) substrate by using low-pressure metalorganic vapor-phase epitaxy with a GaN buffer layer grown at low and high temperatures. The high-growth–temperature GaN layer improved the quality of the cubic AlxGa1−xN. Also, the AlN molar fraction could be controlled by changing the carrier gas flow of trimethylaluminum. The AlxGa1−xN epitaxial layers in the range of 0⩽x⩽0.23 exhibited strong near-band-edge photoluminescence at room temperature. Their photoluminescence peak energies show a linear dependence on the molar fraction.