Electronic structure at InP organic polymer layer interfaces

Organic polymer layer/p-InP(100) interfaces have been investigated using surface photovoltage spectroscopy (SPS) in conjunction with ultraviolet-visible absorption spectroscopy (AS), infrared transmission spectroscopy (IRTS), time-resolved photoluminescence (PL), and x-ray photoemission spectroscopy...

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Veröffentlicht in:Applied physics letters 1997-06, Vol.70 (22), p.3011-3013
Hauptverfasser: Kinrot, N., Shapira, Yoram, Bica de Moraes, M. A.
Format: Artikel
Sprache:eng
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Zusammenfassung:Organic polymer layer/p-InP(100) interfaces have been investigated using surface photovoltage spectroscopy (SPS) in conjunction with ultraviolet-visible absorption spectroscopy (AS), infrared transmission spectroscopy (IRTS), time-resolved photoluminescence (PL), and x-ray photoemission spectroscopy (XPS). Prior to deposition, the etched p-InP(100) surfaces exhibited two gap states, attributed to excess surface P and adsorbed O, respectively. Postdeposition measurements show that N-containing layers suppress the former state at the interface, while the latter state is suppressed if S and F are present in the organic polymer film. A mechanism of these interfacial phenomena is suggested.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.118733