Electronic structure at InP organic polymer layer interfaces
Organic polymer layer/p-InP(100) interfaces have been investigated using surface photovoltage spectroscopy (SPS) in conjunction with ultraviolet-visible absorption spectroscopy (AS), infrared transmission spectroscopy (IRTS), time-resolved photoluminescence (PL), and x-ray photoemission spectroscopy...
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Veröffentlicht in: | Applied physics letters 1997-06, Vol.70 (22), p.3011-3013 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Organic polymer layer/p-InP(100) interfaces have been investigated using surface photovoltage spectroscopy (SPS) in conjunction with ultraviolet-visible absorption spectroscopy (AS), infrared transmission spectroscopy (IRTS), time-resolved photoluminescence (PL), and x-ray photoemission spectroscopy (XPS). Prior to deposition, the etched p-InP(100) surfaces exhibited two gap states, attributed to excess surface P and adsorbed O, respectively. Postdeposition measurements show that N-containing layers suppress the former state at the interface, while the latter state is suppressed if S and F are present in the organic polymer film. A mechanism of these interfacial phenomena is suggested. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.118733 |