Band lineup between CdS and ultra high vacuum-cleaved CuInS2 single crystals

Band lineup between CdS and ultra high vacuum-cleaved CuInS2 single crystals

The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS2 single crystals has been studied by synchrotron excited photoelectron spectroscopy. The valence band discontinuity is determined directly from valence band difference spectra to be ΔEV=0.6 (±0.1) eV. This value...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1997-03, Vol.70 (10), p.1299-1301
Hauptverfasser: Klein, A., Löher, T., Tomm, Y., Pettenkofer, C., Jaegermann, W.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1301
container_issue 10
container_start_page 1299
container_title Applied physics letters
container_volume 70
creator Klein, A.
Löher, T.
Tomm, Y.
Pettenkofer, C.
Jaegermann, W.
description The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS2 single crystals has been studied by synchrotron excited photoelectron spectroscopy. The valence band discontinuity is determined directly from valence band difference spectra to be ΔEV=0.6 (±0.1) eV. This value is significantly smaller than for other preparation conditions given in the literature and evidently not suitable for solar cell applications. The similarity to observations at the CdS/CuInS2 interfaces suggests that neutrality levels play a dominant role in establishing the band lineup at interfaces containing chalcopyrite semiconductors.
doi_str_mv 10.1063/1.118517
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_118517</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_118517</sourcerecordid><originalsourceid>FETCH-LOGICAL-c325t-160ef141d31cc1b2d7911b065166e3614b9233b1b35079afe0d755339621e8a73</originalsourceid><addsrcrecordid>eNotkEtLw0AUhQdRMFbBnzBLN1Pn5nZmmqUGH4WAi-o6zOOmjaSxzCSV_ntT6urwncXh8DF2D3IOUuMjzAGWCswFy0AaI3DCS5ZJKVHoQsE1u0npe0KVI2aserZ94F3b07jnjoZfop6XYc1P9dgN0fJtu9nyg_XjuBO-I3ugwMtx1a9zntp-0xH38ZgG26VbdtVMQXf_OWNfry-f5buoPt5W5VMlPOZqEKAlNbCAgOA9uDyYAsBJrUBrQg0LV0zfHDhU0hS2IRmMUoiFzoGW1uCMPZx3ffxJKVJT72O7s_FYg6xPFmqozxbwD7GGTNI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Band lineup between CdS and ultra high vacuum-cleaved CuInS2 single crystals</title><source>AIP Digital Archive</source><creator>Klein, A. ; Löher, T. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W.</creator><creatorcontrib>Klein, A. ; Löher, T. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W.</creatorcontrib><description>The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS2 single crystals has been studied by synchrotron excited photoelectron spectroscopy. The valence band discontinuity is determined directly from valence band difference spectra to be ΔEV=0.6 (±0.1) eV. This value is significantly smaller than for other preparation conditions given in the literature and evidently not suitable for solar cell applications. The similarity to observations at the CdS/CuInS2 interfaces suggests that neutrality levels play a dominant role in establishing the band lineup at interfaces containing chalcopyrite semiconductors.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.118517</identifier><language>eng</language><ispartof>Applied physics letters, 1997-03, Vol.70 (10), p.1299-1301</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c325t-160ef141d31cc1b2d7911b065166e3614b9233b1b35079afe0d755339621e8a73</citedby><cites>FETCH-LOGICAL-c325t-160ef141d31cc1b2d7911b065166e3614b9233b1b35079afe0d755339621e8a73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Klein, A.</creatorcontrib><creatorcontrib>Löher, T.</creatorcontrib><creatorcontrib>Tomm, Y.</creatorcontrib><creatorcontrib>Pettenkofer, C.</creatorcontrib><creatorcontrib>Jaegermann, W.</creatorcontrib><title>Band lineup between CdS and ultra high vacuum-cleaved CuInS2 single crystals</title><title>Applied physics letters</title><description>The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS2 single crystals has been studied by synchrotron excited photoelectron spectroscopy. The valence band discontinuity is determined directly from valence band difference spectra to be ΔEV=0.6 (±0.1) eV. This value is significantly smaller than for other preparation conditions given in the literature and evidently not suitable for solar cell applications. The similarity to observations at the CdS/CuInS2 interfaces suggests that neutrality levels play a dominant role in establishing the band lineup at interfaces containing chalcopyrite semiconductors.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNotkEtLw0AUhQdRMFbBnzBLN1Pn5nZmmqUGH4WAi-o6zOOmjaSxzCSV_ntT6urwncXh8DF2D3IOUuMjzAGWCswFy0AaI3DCS5ZJKVHoQsE1u0npe0KVI2aserZ94F3b07jnjoZfop6XYc1P9dgN0fJtu9nyg_XjuBO-I3ugwMtx1a9zntp-0xH38ZgG26VbdtVMQXf_OWNfry-f5buoPt5W5VMlPOZqEKAlNbCAgOA9uDyYAsBJrUBrQg0LV0zfHDhU0hS2IRmMUoiFzoGW1uCMPZx3ffxJKVJT72O7s_FYg6xPFmqozxbwD7GGTNI</recordid><startdate>19970310</startdate><enddate>19970310</enddate><creator>Klein, A.</creator><creator>Löher, T.</creator><creator>Tomm, Y.</creator><creator>Pettenkofer, C.</creator><creator>Jaegermann, W.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19970310</creationdate><title>Band lineup between CdS and ultra high vacuum-cleaved CuInS2 single crystals</title><author>Klein, A. ; Löher, T. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c325t-160ef141d31cc1b2d7911b065166e3614b9233b1b35079afe0d755339621e8a73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Klein, A.</creatorcontrib><creatorcontrib>Löher, T.</creatorcontrib><creatorcontrib>Tomm, Y.</creatorcontrib><creatorcontrib>Pettenkofer, C.</creatorcontrib><creatorcontrib>Jaegermann, W.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Klein, A.</au><au>Löher, T.</au><au>Tomm, Y.</au><au>Pettenkofer, C.</au><au>Jaegermann, W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Band lineup between CdS and ultra high vacuum-cleaved CuInS2 single crystals</atitle><jtitle>Applied physics letters</jtitle><date>1997-03-10</date><risdate>1997</risdate><volume>70</volume><issue>10</issue><spage>1299</spage><epage>1301</epage><pages>1299-1301</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS2 single crystals has been studied by synchrotron excited photoelectron spectroscopy. The valence band discontinuity is determined directly from valence band difference spectra to be ΔEV=0.6 (±0.1) eV. This value is significantly smaller than for other preparation conditions given in the literature and evidently not suitable for solar cell applications. The similarity to observations at the CdS/CuInS2 interfaces suggests that neutrality levels play a dominant role in establishing the band lineup at interfaces containing chalcopyrite semiconductors.</abstract><doi>10.1063/1.118517</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 1997-03, Vol.70 (10), p.1299-1301
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_118517
source AIP Digital Archive
title Band lineup between CdS and ultra high vacuum-cleaved CuInS2 single crystals
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T07%3A45%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Band%20lineup%20between%20CdS%20and%20ultra%20high%20vacuum-cleaved%20CuInS2%20single%20crystals&rft.jtitle=Applied%20physics%20letters&rft.au=Klein,%20A.&rft.date=1997-03-10&rft.volume=70&rft.issue=10&rft.spage=1299&rft.epage=1301&rft.pages=1299-1301&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.118517&rft_dat=%3Ccrossref%3E10_1063_1_118517%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true