Elastic moduli of gallium nitride

Elastic moduli of gallium nitride

The second-order elastic constants of wurtzite phase GaN have been measured with 0.2% accuracy using a resonance ultrasound method. The measurements were done on a 0.29-mm-thick GaN crystal grown by chloride vapor-phase transport and subsequently detached from the substrate. The elastic moduli in un...

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Veröffentlicht in:Applied Physics Letters 1997-03, Vol.70 (9), p.1122-1124
Hauptverfasser: Schwarz, R. B., Khachaturyan, K., Weber, E. R.
Format: Artikel
Sprache:eng
Schlagworte:
CRYSTAL GROWTH
ELASTICITY
EPITAXY
GALLIUM NITRIDES
LAYERS
MATERIALS SCIENCE
RESONANCE
STRESSES
ULTRASONIC TESTING
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Zusammenfassung:The second-order elastic constants of wurtzite phase GaN have been measured with 0.2% accuracy using a resonance ultrasound method. The measurements were done on a 0.29-mm-thick GaN crystal grown by chloride vapor-phase transport and subsequently detached from the substrate. The elastic moduli in units of GPa are: c11=377, c12=160, c13=114, c33=209, and c44=81.4. The elastic moduli are used to calculate the biaxial misfit stresses expected in heteroepitaxial thin films of GaN.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.118503