Threshold sheath potential for the nucleation and growth of cubic boron nitride by inductively coupled plasma enhanced chemical-vapor deposition

The nucleation and growth conditions of c-BN films were studied in low-pressure inductively coupled plasma enhanced chemical-vapor deposition. The threshold sheath potentials needed for the nucleation and the growth of c-BN were sustained by two step Vsheath deposition. The threshold sheath potential for the growth Vsheathg was found to be significantly lower than the threshold value required for nucleation Vsheathn. Under our experimental condition, the values of Vsheathg and Vsheathn were found to be 45 and 65 V.