Lattice parameters of gallium nitride
Lattice parameters of gallium nitride were measured using high-resolution x-ray diffraction. The following samples were examined: (i) single crystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers, (iii) heteroepitaxial layers (wurtzite structure) on silicon carbide, on sapphire, and...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 1996-07, Vol.69 (1), p.73-75 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 75 |
|---|---|
| container_issue | 1 |
| container_start_page | 73 |
| container_title | Applied physics letters |
| container_volume | 69 |
| creator | Leszczynski, M. Teisseyre, H. Suski, T. Grzegory, I. Bockowski, M. Jun, J. Porowski, S. Pakula, K. Baranowski, J. M. Foxon, C. T. Cheng, T. S. |
| description | Lattice parameters of gallium nitride were measured using high-resolution x-ray diffraction. The following samples were examined: (i) single crystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers, (iii) heteroepitaxial layers (wurtzite structure) on silicon carbide, on sapphire, and on gallium arsenide, (iv) cubic gallium nitride layers on gallium arsenide. The differences between the samples are discussed in terms of their concentrations of free electrons and structural defects. |
| doi_str_mv | 10.1063/1.118123 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_118123</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_118123</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-d0f09eb0554527101dad55badb040360cf0e4b56ea17d4f9b15ed39144169abf3</originalsourceid><addsrcrecordid>eNotj8FKxDAUAIMoWFfBT-hF8NL1vb4kNUdZdBUKXvQcXppEIq27JPHg37uynoa5DIwQ1whrBE13uEa8x55ORIMwDB0d9FQ0AECdNgrPxUUpnwdVPVEjbkauNU2h3XPmJdSQS7uL7QfPc_pe2q9Uc_LhUpxFnku4-udKvD89vm2eu_F1-7J5GLupN1g7DxFMcKCUVP2AgJ69Uo69AwmkYYoQpFM6MA5eRuNQBU8GpURt2EVaidtjd8q7UnKIdp_TwvnHIti_PYv2uEe_nstAcg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Lattice parameters of gallium nitride</title><source>AIP Digital Archive</source><creator>Leszczynski, M. ; Teisseyre, H. ; Suski, T. ; Grzegory, I. ; Bockowski, M. ; Jun, J. ; Porowski, S. ; Pakula, K. ; Baranowski, J. M. ; Foxon, C. T. ; Cheng, T. S.</creator><creatorcontrib>Leszczynski, M. ; Teisseyre, H. ; Suski, T. ; Grzegory, I. ; Bockowski, M. ; Jun, J. ; Porowski, S. ; Pakula, K. ; Baranowski, J. M. ; Foxon, C. T. ; Cheng, T. S.</creatorcontrib><description>Lattice parameters of gallium nitride were measured using high-resolution x-ray diffraction. The following samples were examined: (i) single crystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers, (iii) heteroepitaxial layers (wurtzite structure) on silicon carbide, on sapphire, and on gallium arsenide, (iv) cubic gallium nitride layers on gallium arsenide. The differences between the samples are discussed in terms of their concentrations of free electrons and structural defects.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.118123</identifier><language>eng</language><ispartof>Applied physics letters, 1996-07, Vol.69 (1), p.73-75</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-d0f09eb0554527101dad55badb040360cf0e4b56ea17d4f9b15ed39144169abf3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Leszczynski, M.</creatorcontrib><creatorcontrib>Teisseyre, H.</creatorcontrib><creatorcontrib>Suski, T.</creatorcontrib><creatorcontrib>Grzegory, I.</creatorcontrib><creatorcontrib>Bockowski, M.</creatorcontrib><creatorcontrib>Jun, J.</creatorcontrib><creatorcontrib>Porowski, S.</creatorcontrib><creatorcontrib>Pakula, K.</creatorcontrib><creatorcontrib>Baranowski, J. M.</creatorcontrib><creatorcontrib>Foxon, C. T.</creatorcontrib><creatorcontrib>Cheng, T. S.</creatorcontrib><title>Lattice parameters of gallium nitride</title><title>Applied physics letters</title><description>Lattice parameters of gallium nitride were measured using high-resolution x-ray diffraction. The following samples were examined: (i) single crystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers, (iii) heteroepitaxial layers (wurtzite structure) on silicon carbide, on sapphire, and on gallium arsenide, (iv) cubic gallium nitride layers on gallium arsenide. The differences between the samples are discussed in terms of their concentrations of free electrons and structural defects.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNotj8FKxDAUAIMoWFfBT-hF8NL1vb4kNUdZdBUKXvQcXppEIq27JPHg37uynoa5DIwQ1whrBE13uEa8x55ORIMwDB0d9FQ0AECdNgrPxUUpnwdVPVEjbkauNU2h3XPmJdSQS7uL7QfPc_pe2q9Uc_LhUpxFnku4-udKvD89vm2eu_F1-7J5GLupN1g7DxFMcKCUVP2AgJ69Uo69AwmkYYoQpFM6MA5eRuNQBU8GpURt2EVaidtjd8q7UnKIdp_TwvnHIti_PYv2uEe_nstAcg</recordid><startdate>19960701</startdate><enddate>19960701</enddate><creator>Leszczynski, M.</creator><creator>Teisseyre, H.</creator><creator>Suski, T.</creator><creator>Grzegory, I.</creator><creator>Bockowski, M.</creator><creator>Jun, J.</creator><creator>Porowski, S.</creator><creator>Pakula, K.</creator><creator>Baranowski, J. M.</creator><creator>Foxon, C. T.</creator><creator>Cheng, T. S.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19960701</creationdate><title>Lattice parameters of gallium nitride</title><author>Leszczynski, M. ; Teisseyre, H. ; Suski, T. ; Grzegory, I. ; Bockowski, M. ; Jun, J. ; Porowski, S. ; Pakula, K. ; Baranowski, J. M. ; Foxon, C. T. ; Cheng, T. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-d0f09eb0554527101dad55badb040360cf0e4b56ea17d4f9b15ed39144169abf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Leszczynski, M.</creatorcontrib><creatorcontrib>Teisseyre, H.</creatorcontrib><creatorcontrib>Suski, T.</creatorcontrib><creatorcontrib>Grzegory, I.</creatorcontrib><creatorcontrib>Bockowski, M.</creatorcontrib><creatorcontrib>Jun, J.</creatorcontrib><creatorcontrib>Porowski, S.</creatorcontrib><creatorcontrib>Pakula, K.</creatorcontrib><creatorcontrib>Baranowski, J. M.</creatorcontrib><creatorcontrib>Foxon, C. T.</creatorcontrib><creatorcontrib>Cheng, T. S.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Leszczynski, M.</au><au>Teisseyre, H.</au><au>Suski, T.</au><au>Grzegory, I.</au><au>Bockowski, M.</au><au>Jun, J.</au><au>Porowski, S.</au><au>Pakula, K.</au><au>Baranowski, J. M.</au><au>Foxon, C. T.</au><au>Cheng, T. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lattice parameters of gallium nitride</atitle><jtitle>Applied physics letters</jtitle><date>1996-07-01</date><risdate>1996</risdate><volume>69</volume><issue>1</issue><spage>73</spage><epage>75</epage><pages>73-75</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Lattice parameters of gallium nitride were measured using high-resolution x-ray diffraction. The following samples were examined: (i) single crystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers, (iii) heteroepitaxial layers (wurtzite structure) on silicon carbide, on sapphire, and on gallium arsenide, (iv) cubic gallium nitride layers on gallium arsenide. The differences between the samples are discussed in terms of their concentrations of free electrons and structural defects.</abstract><doi>10.1063/1.118123</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1996-07, Vol.69 (1), p.73-75 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_118123 |
| source | AIP Digital Archive |
| title | Lattice parameters of gallium nitride |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T08%3A55%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Lattice%20parameters%20of%20gallium%20nitride&rft.jtitle=Applied%20physics%20letters&rft.au=Leszczynski,%20M.&rft.date=1996-07-01&rft.volume=69&rft.issue=1&rft.spage=73&rft.epage=75&rft.pages=73-75&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.118123&rft_dat=%3Ccrossref%3E10_1063_1_118123%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |