Lattice parameters of gallium nitride

Lattice parameters of gallium nitride

Lattice parameters of gallium nitride were measured using high-resolution x-ray diffraction. The following samples were examined: (i) single crystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers, (iii) heteroepitaxial layers (wurtzite structure) on silicon carbide, on sapphire, and...

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Veröffentlicht in:Applied physics letters 1996-07, Vol.69 (1), p.73-75
Hauptverfasser: Leszczynski, M., Teisseyre, H., Suski, T., Grzegory, I., Bockowski, M., Jun, J., Porowski, S., Pakula, K., Baranowski, J. M., Foxon, C. T., Cheng, T. S.
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Sprache:eng
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Zusammenfassung:Lattice parameters of gallium nitride were measured using high-resolution x-ray diffraction. The following samples were examined: (i) single crystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers, (iii) heteroepitaxial layers (wurtzite structure) on silicon carbide, on sapphire, and on gallium arsenide, (iv) cubic gallium nitride layers on gallium arsenide. The differences between the samples are discussed in terms of their concentrations of free electrons and structural defects.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.118123