Site-specific reaction kinetics for gallium arsenide metalorganic vapor-phase epitaxy

Site-specific reaction kinetics for gallium arsenide metalorganic vapor-phase epitaxy

We have developed a kinetic model for arsine decomposition on GaAs(001) that accounts for the effect of the surface reconstructions on the rates of As4 and As2 desorption. The main assumption of the model is that As2 desorbs more slowly from Ga sites than from As sites. The model accurately simulate...

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Veröffentlicht in:Applied physics letters 1996-11, Vol.69 (21), p.3236-3238
Hauptverfasser: Adamson, S. D., Han, B. K., Hicks, R. F.
Format: Artikel
Sprache:eng
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Zusammenfassung:We have developed a kinetic model for arsine decomposition on GaAs(001) that accounts for the effect of the surface reconstructions on the rates of As4 and As2 desorption. The main assumption of the model is that As2 desorbs more slowly from Ga sites than from As sites. The model accurately simulates the temperature-programmed desorption of arsenic from GaAs(001). In addition, it reveals how the As coverage and the As2 and As4 production rates depend on the conditions employed during GaAs metalorganic vapor-phase epitaxy.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.118021