Photoluminescence study of high quality InGaN–GaN single heterojunctions

Photoluminescence study of high quality InGaN–GaN single heterojunctions

In this letter we report the results of room-temperature continuous wave and pulsed photoluminescence measurements on InGaN–GaN single heterojunctions. These InGaN–GaN heterojunctions were deposited over basal plane sapphire substrates using low pressure metalorganic chemical vapor deposition. We su...

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Veröffentlicht in:Applied physics letters 1996-07, Vol.69 (5), p.668-670
Hauptverfasser: Sun, C. J., Yang, J. W., Chen, Q., Lim, B. W., Anwar, M. Zubair, Khan, M. Asif, Temkin, H., Weismann, D., Brenner, I.
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Sprache:eng
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Zusammenfassung:In this letter we report the results of room-temperature continuous wave and pulsed photoluminescence measurements on InGaN–GaN single heterojunctions. These InGaN–GaN heterojunctions were deposited over basal plane sapphire substrates using low pressure metalorganic chemical vapor deposition. We suggest the use of vertical cavity stimulated emission instead of spontaneous emission peak position as a good measure of the InGaN band edge.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.117800