First order gain-coupled GaInAs/GaAs distributed feedback laser diodes patterned by focused ion beam implantation

First order gain-coupled GaInAs/GaAs distributed feedback laser diodes patterned by focused ion beam implantation

Electrically pumped gain-coupled distributed feedback lasers with first order gratings have been fabricated on a (Ga,In)As/(Al,Ga)As separate confinement heterostructure by focused ion beam implantation and epitaxial overgrowth. The lasers are operating at room temperature at wavelengths around 950...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1996-09, Vol.69 (13), p.1906-1908
Hauptverfasser: Orth, A., Reithmaier, J. P., Zeh, R., Doleschel, H., Forchel, A.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Electrically pumped gain-coupled distributed feedback lasers with first order gratings have been fabricated on a (Ga,In)As/(Al,Ga)As separate confinement heterostructure by focused ion beam implantation and epitaxial overgrowth. The lasers are operating at room temperature at wavelengths around 950 nm. All investigated devices show single longitudinal mode emission at all operating conditions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.117617