Active mode locking at 50 GHz repetition frequency by half-frequency modulation of monolithic semiconductor lasers integrated with electroabsorption modulators

Active mode locking at 50 GHz repetition frequency by half-frequency modulation of monolithic semiconductor lasers integrated with electroabsorption modulators

Active mode locking achieved at a 50 GHz repetition frequency by modulation at half (25 GHz) the cavity resonance frequency using a monolithic mode-locked InGaAsP laser integrated with an electroabsorption modulator is described. A pulse width of around 3 ps and a high suppression ratio of more than...

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Veröffentlicht in:Applied physics letters 1996-10, Vol.69 (18), p.2626-2628
Hauptverfasser: Sato, Kenji, Kotaka, Isamu, Kondo, Yasuhiro, Yamamoto, Mitsuo
Format: Artikel
Sprache:eng
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Zusammenfassung:Active mode locking achieved at a 50 GHz repetition frequency by modulation at half (25 GHz) the cavity resonance frequency using a monolithic mode-locked InGaAsP laser integrated with an electroabsorption modulator is described. A pulse width of around 3 ps and a high suppression ratio of more than 33 dB of the intensity modulation at the driving frequency are obtained.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.117556