Highly insulative barium zirconate-titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications

Polycrystalline thin films of Ba(ZrxTi1−x)O3 with x=0–0.4 and a thickness of ∼180 nm were deposited on platinum-coated silicon substrates by rf magnetron sputtering at 500 °C. Ba-rich targets were used to prepare films of stoichiometric composition. The film having x=0.12 exhibited a satisfactory dielectric property of dielectric constant, k≊300, and dissipation factor, tan δ