Disordering of the ZnCdSe single quantum well structure by Cd diffusion

The effects of annealing on a ZnCdSe single quantum well (SQW) structure with ZnCdSSe/ZnSSe superlattice optical guiding layers are investigated. X-ray diffraction and photoluminescence (PL) measurements showed disordering of a ZnCdSSe/ZnSSe superlattice after annealing at about 500 °C. The PL peak...

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Veröffentlicht in:Applied physics letters 1996-12, Vol.69 (23), p.3572-3574
Hauptverfasser: Momose, M., Taike, A., Kawata, M., Gotoh, J., Nakatsuka, S.
Format: Artikel
Sprache:eng
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Zusammenfassung:The effects of annealing on a ZnCdSe single quantum well (SQW) structure with ZnCdSSe/ZnSSe superlattice optical guiding layers are investigated. X-ray diffraction and photoluminescence (PL) measurements showed disordering of a ZnCdSSe/ZnSSe superlattice after annealing at about 500 °C. The PL peak energy of the SQW shifted to the higher energy side, and the linewidth narrowed in the sample annealed at 300 °C. Cadmium diffusion was confirmed by secondary ion mass spectrometry. We found that the disordering of the ZnCdSSe/ZnSSe superlattice and the changes in the emissions from the SQW were due to the Cd diffusion.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.117210