Morphological characterization and strain release of GaAs/InAs (001) heterostructures

Morphological characterization and strain release of GaAs/InAs (001) heterostructures

The surface morphology of GaAs layers on (001) InAs substrates, grown by MOVPE at temperatures in the range 500–650 °C and for times from a few seconds to minutes, has been observed by atomic force microscopy. Information on the strain release and on the surface quality has been obtained by Raman sc...

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Veröffentlicht in:Applied physics letters 1996-08, Vol.69 (7), p.957-959
Hauptverfasser: Attolini, G., Chimenti, E., Franzosi, P., Gennari, S., Pelosi, C., Lottici, P. P.
Format: Artikel
Sprache:eng
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Zusammenfassung:The surface morphology of GaAs layers on (001) InAs substrates, grown by MOVPE at temperatures in the range 500–650 °C and for times from a few seconds to minutes, has been observed by atomic force microscopy. Information on the strain release and on the surface quality has been obtained by Raman scattering and high resolution x-ray diffraction measurements. Large islands with different shapes and facets are generally formed and only at 550 °C is a quasi-2D growth observed. At the highest growth temperatures InxGa1−xAs is detected at the interface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.117094