Realization of optically pumped second-order GaInN-distributed-feedback lasers

Room temperature distributed-feedback (DFB) laser operation is demonstrated with emission wavelengths ranging from 389 to 399 nm. Second-order DFB gratings were defined by electron beam lithography and reactive ion etching in the top GaN barrier layer of a GaInN/GaN double heterostructure grown by m...

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Veröffentlicht in:Applied physics letters 1996-09, Vol.69 (14), p.2068-2070
Hauptverfasser: Hofmann, R., Gauggel, H.-P., Griesinger, U. A., Gräbeldinger, H., Adler, F., Ernst, P., Bolay, H., Härle, V., Scholz, F., Schweizer, H., Pilkuhn, M. H.
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Sprache:eng
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Zusammenfassung:Room temperature distributed-feedback (DFB) laser operation is demonstrated with emission wavelengths ranging from 389 to 399 nm. Second-order DFB gratings were defined by electron beam lithography and reactive ion etching in the top GaN barrier layer of a GaInN/GaN double heterostructure grown by metalorganic vapor phase epitaxy. Our data allow a precise determination of the effective refractive index neff(λ) over the whole emission range. neff(λ) is compared with previously published values for GaN and GaInN.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.116882