The influence of TiSi2 and CoSi2 growth on Si native point defects: The role of the diffusing species

Boron- and Sb-doped superlattice samples have been used to investigate intrinsic point defects in Si after formation of TiSi2 and CoSi2 films from codeposited metal and Si. The as-deposited films had the compositions Ti, TiSi0.8, TiSi2.2, and CoSi0.8. After annealing in argon for 1 h at 850 °C, the films formed TiSi2 and CoSi2, respectively. All samples showed the same slight interstitial undersaturation and vacancy supersaturation. Since TiSi2 and all its precursor phases form completely by Si diffusion and the CoSi+Si→CoSi2 transformation occurs by Co diffusion, this indicates that the diffusing species during film growth is not the determining factor in the point defect perturbance in the Si substrate.