Time-resolved D-band luminescence in strain-relieved SiGe/Si
Temporal decay characteristics of dislocation-related luminescence bands (D1–D4) were explored in strain-relieved epitaxial SiGe/Si(100). Close similarity of the decay profiles was observed not only between D1 and D2 bands but also between D3 and D4 bands. The decay transients of the D1 and D2 bands...
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| Veröffentlicht in: | Applied physics letters 1996-04, Vol.68 (14), p.1889-1891 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Temporal decay characteristics of dislocation-related luminescence bands (D1–D4) were explored in strain-relieved epitaxial SiGe/Si(100). Close similarity of the decay profiles was observed not only between D1 and D2 bands but also between D3 and D4 bands. The decay transients of the D1 and D2 bands at low temperatures are characterized by long decay times, τ≳200 ns, whereas the D3 and D4 bands exhibit even sharper transients with τ |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.116284 |